IMPORTANCE OF THE PLASMA TO PULSED LASER ANNEALING
J. Phys. Colloques, 41 C4 (1980) C4-15-C4-24
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Structural, dynamical, electronic, and bonding properties of laser-heated silicon: Anab initiomolecular-dynamics study
Pier Luigi Silvestrelli, Ali Alavi, Michele Parrinello and Daan FrenkelPhysical Review B 56 (7) 3806 (1997)
https://doi.org/10.1103/PhysRevB.56.3806
Laser ablation of ZnSe using pulsed 193‐nm irradiation
J. Simpson and J. O. WilliamsJournal of Applied Physics 70 (4) 2001 (1991)
https://doi.org/10.1063/1.349485
Structural Change Induced by Electronic Excitation on GaP Surfaces
Yoshihiro Kumazaki, Yasuo Nakai and Noriaki ItohPhysical Review Letters 59 (25) 2883 (1987)
https://doi.org/10.1103/PhysRevLett.59.2883
Picosecond and nanosecond laser-induced second-harmonic generation from centrosymmetric semiconductors
J. A. Litwin, J. E. Sipe and H. M. van DrielPhysical Review B 31 (8) 5543 (1985)
https://doi.org/10.1103/PhysRevB.31.5543
Energy Transfer during Silicon Irradiation by Femtosecond Laser Pulse
D. Hulin, M. Combescot, J. Bok, et al.Physical Review Letters 52 (22) 1998 (1984)
https://doi.org/10.1103/PhysRevLett.52.1998
Disorder-order structural transition in highly excited semiconductor plasma
Áurea R. Vasconcellos and Roberto LuzziPhysical Review B 29 (2) 1052 (1984)
https://doi.org/10.1103/PhysRevB.29.1052
Phenomenological model for pisosecond-pulse laser annealing of semiconductors
D. AgassiJournal of Applied Physics 55 (12) 4376 (1984)
https://doi.org/10.1063/1.333007
Melting of silicon
M. WauteletPhysics Letters A 95 (9) 505 (1983)
https://doi.org/10.1016/0375-9601(83)90508-X
Second harmonic generation in centro-symmetric semiconductors
D. Guidotti, T.A. Driscoll and H.J. GerritsenSolid State Communications 46 (4) 337 (1983)
https://doi.org/10.1016/0038-1098(83)90665-8
Acoustic signals from laser‐annealed amorphous silicon
N. Baltzer, M. von Allmen and M. W. SigristApplied Physics Letters 43 (9) 826 (1983)
https://doi.org/10.1063/1.94509
Time-Resolved Optical Transmission and Reflectivity of Pulsed-Ruby-Laser Irradiated Crystalline Silicon
Douglas H. LowndesPhysical Review Letters 48 (4) 267 (1982)
https://doi.org/10.1103/PhysRevLett.48.267
Instability of the Electron-Hole Plasma in Silicon
M. Combescot and J. BokPhysical Review Letters 48 (20) 1413 (1982)
https://doi.org/10.1103/PhysRevLett.48.1413
Pulsed laser annealing of single-crystal and ion-implanted semiconductors
Dae Kim and D. KwongIEEE Journal of Quantum Electronics 18 (2) 224 (1982)
https://doi.org/10.1109/JQE.1982.1071497
Phonon spectrum of a model of electronically excited silicon
Rana Biswas and Vinay AmbegaokarPhysical Review B 26 (4) 1980 (1982)
https://doi.org/10.1103/PhysRevB.26.1980
Confinement of laser‐generated carriers in semiconductors by induced lattice temperature gradients
H. M. van Driel, J. S. Preston and M. I. GallantApplied Physics Letters 40 (5) 385 (1982)
https://doi.org/10.1063/1.93111
Laser Annealing Si Covered with a Metal Film: Test for Growth from the Melt
James A. Van VechtenPhysical Review Letters 47 (4) 283 (1981)
https://doi.org/10.1103/PhysRevLett.47.283
Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?
J.A. Van Vechten and A.D. CompaanSolid State Communications 39 (8) 867 (1981)
https://doi.org/10.1016/0038-1098(81)90027-2
Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal
J. A. Van Vechten and M. WauteletPhysical Review B 23 (10) 5543 (1981)
https://doi.org/10.1103/PhysRevB.23.5543
Laser-induced reconstruction and diffusion of As in Si
M. WauteletPhysics Letters A 84 (5) 263 (1981)
https://doi.org/10.1016/0375-9601(81)90807-0
Induced Absorption in Silicon under Intense Laser Excitation: Evidence for a Self-Confined Plasma
A. Aydinli, H. W. Lo, M. C. Lee and A. CompaanPhysical Review Letters 46 (25) 1640 (1981)
https://doi.org/10.1103/PhysRevLett.46.1640