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Cited article:

Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium

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Physical Review Applied 18 (6) (2022)
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Deformation slip and twinning in bulk and nanocrystalline semiconductors

Maryam Zahiri-Azar, Pirouz Pirouz and K Peter D Lagerlöf
Journal of Physics: Conference Series 281 012018 (2011)
https://doi.org/10.1088/1742-6596/281/1/012018

Interaction of dopant atoms with stacking faults in silicon crystals

Y. Ohno, T. Taishi, Y. Tokumoto and I. Yonenaga
Journal of Applied Physics 108 (7) (2010)
https://doi.org/10.1063/1.3490753

Photoluminescence in germanium with a quasi-equilibrium dislocation structure

S. A. Shevchenko and A. N. Tereshchenko
Physics of the Solid State 49 (1) 28 (2007)
https://doi.org/10.1134/S1063783407010064

Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors

G. Vanderschaeve and D. Caillard
physica status solidi (a) 202 (5) 939 (2005)
https://doi.org/10.1002/pssa.200460540

Mechanisms of energy dissipation during displacement- sensitive indentation in Ge single crystals at elevated temperatures

B. Ya. Farber, V. I. Orlov, V. I. Nikitenko and A. H. Heuer
Philosophical Magazine A 78 (3) 671 (1998)
https://doi.org/10.1080/01418619808241929

Plastic Deformation of GaSb and the Influence of Stacking-Fault Energy on Dynamical Recovery of Semiconductors

H. Siethoff, H. G. Brion and W. Schröter
Physica Status Solidi (a) 125 (1) 191 (1991)
https://doi.org/10.1002/pssa.2211250116

Slip and twinning in high-stress-deformed GaAs and the influence of doping

Y. Androussi, G. Vanderschaeve and A. Lefebvre
Philosophical Magazine A 59 (6) 1189 (1989)
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Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

J. L. Demenet, P. Grosbras, H. Garem and J. C. Desoyer
Philosophical Magazine A 59 (3) 501 (1989)
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Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

Bruno C. De Cooman and C. Barry Carter
Philosophical Magazine A 60 (2) 245 (1989)
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On the yield point of floating-zone silicon single crystals II. A quantitative analysis of the dislocation structure at the lower yield point

Abdellatif Oueldennaoua, Rafik Allem, Amand George and Jean-Pierre Michel
Philosophical Magazine A 57 (1) 51 (1988)
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Dark-field electron microscopy of dissociated dislocations and surface steps in silicon using forbidden reflections

A. Ourmazd, G. R. Anstis and P. B. Hirsch
Philosophical Magazine A 48 (1) 139 (1983)
https://doi.org/10.1080/01418618308234892