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Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Structural damage in thin SLIM-Cut c-Si foils fabricated for solar cell purposes: atomic assessment by electron spin resonance

J Kepa, R Martini and A Stesmans
Semiconductor Science and Technology 30 (11) 115015 (2015)
https://doi.org/10.1088/0268-1242/30/11/115015

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

M. Fehr, P. Simon, T. Sontheimer, et al.
Applied Physics Letters 101 (12) (2012)
https://doi.org/10.1063/1.4754609

Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects

P. Somers, A. Stesmans, V. V. Afanas’ev, et al.
Journal of Applied Physics 107 (9) (2010)
https://doi.org/10.1063/1.3326516

Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

A. Stesmans, P. Somers, V. V. Afanas’ev, et al.
Applied Physics Letters 93 (10) 103505 (2008)
https://doi.org/10.1063/1.2974793

Dislocations as electrically active centres in semiconductors half a century from the discovery

Tadeusz Figielski
Journal of Physics: Condensed Matter 14 (48) 12665 (2002)
https://doi.org/10.1088/0953-8984/14/48/301

Paramagnetic Structure of the Soliton of the 30° Partial Dislocation in Silicon

Gábor Csányi, Sohrab Ismail-Beigi and T. A. Arias
Physical Review Letters 80 (18) 3984 (1998)
https://doi.org/10.1103/PhysRevLett.80.3984

Electron Spin Resonance Study of Deformation-Induced Si–K1 Centers in Silicon

Masashi Suezawa and Koji Sumino
Journal of the Physical Society of Japan 58 (7) 2463 (1989)
https://doi.org/10.1143/JPSJ.58.2463

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

F. Louchet and J. Thibault-Desseaux
Revue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700

Defect states inp‐type silicon crystals induced by plastic deformation

Haruhiko Ono and Koji Sumino
Journal of Applied Physics 57 (2) 287 (1985)
https://doi.org/10.1063/1.334802

Electrical properties of dislocations and point defects in plastically deformed silicon

P. Omling, E. R. Weber, L. Montelius, H. Alexander and J. Michel
Physical Review B 32 (10) 6571 (1985)
https://doi.org/10.1103/PhysRevB.32.6571

Calculation of the localized electronic states associated with static and moving dislocations in silicon

M. Heggie and R. Jones
Philosophical Magazine B 48 (4) 379 (1983)
https://doi.org/10.1080/13642818308246489