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Cited article:
R. Jones
J. Phys. Colloques, 40 C6 (1979) C6-33-C6-38
This article has been cited by the following article(s):
19 articles
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Atomic and electronic structures of the 90° partial dislocation in silicon
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Molecular-cluster studies of defects in silicon lattices. III. Dangling-bond reconstruction at the core of a 90° partial dislocation in silicon
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Molecular-cluster studies of defects in silicon lattices
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Electronic structure of the unreconstructed 30° partial dislocation in silicon
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The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion
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