Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Thermally activated plastic deformation of Si single crystals at temperatures above 1173 K

Tubasa Suzuki, Masaki Tanaka, Tatsuya Morikawa, Jun Fujise and Toshiaki Ono
Japanese Journal of Applied Physics 62 (2) 021001 (2023)
https://doi.org/10.35848/1347-4065/acb2b9

Polymerization of defect states at dislocation cores in InAs

Ji-Sang Park, Joongoo Kang, Ji-Hui Yang, W. E. McMahon and Su-Huai Wei
Journal of Applied Physics 119 (4) (2016)
https://doi.org/10.1063/1.4940743

Kinetic Monte Carlo and density functional study of hydrogen enhanced dislocation glide in silicon

S. Scarle and C. P. Ewels
The European Physical Journal B 51 (2) 195 (2006)
https://doi.org/10.1140/epjb/e2006-00215-9

First Principles Simulations of the Structure, Formation, and Migration Energies of Kinks on the 90° Partial Dislocation in Silicon

Alexander Valladares, J. White and A. Sutton
Physical Review Letters 81 (22) 4903 (1998)
https://doi.org/10.1103/PhysRevLett.81.4903

Structural transformation in the 90° partial dislocation in Si due to Ga impurities

Theodore Kaplan, Mark Mostoller and M. Chisholm
Physical Review B 58 (19) 12865 (1998)
https://doi.org/10.1103/PhysRevB.58.12865

Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon

Niklas Lehto and Sven Öberg
Physical Review Letters 80 (25) 5568 (1998)
https://doi.org/10.1103/PhysRevLett.80.5568

Molecular-cluster studies of defects in silicon lattices. III. Dangling-bond reconstruction at the core of a 90° partial dislocation in silicon

Aldo Amore Bonapasta, Claudio Battistoni, Andrea Lapiccirella, et al.
Physical Review B 37 (6) 3058 (1988)
https://doi.org/10.1103/PhysRevB.37.3058

Molecular-cluster studies of defects in silicon lattices

A. Amore-Bonapasta, C. Battistoni, A. Lapiccirella, et al.
Il Nuovo Cimento D 6 (1) 51 (1985)
https://doi.org/10.1007/BF02451140

Electronic structure of the unreconstructed 30° partial dislocation in silicon

John Northrup, Marvin Cohen, James Chelikowsky, J. Spence and A. Olsen
Physical Review B 24 (8) 4623 (1981)
https://doi.org/10.1103/PhysRevB.24.4623

The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion

R. Jones
Philosophical Magazine Part B 42 (2) 213 (1980)
https://doi.org/10.1080/01418638008227280