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Cited article:

Locking of Dislocations without the Application of an External Stress: Experiment and Theory

B. A. Greenberg, M. O. Ivanov, O. V. Antonova, et al.
Uspehi Fiziki Metallov 14 (2) 107 (2013)
https://doi.org/10.15407/ufm.14.02.107

Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces

N. J. Quitoriano and E. A. Fitzgerald
Journal of Applied Physics 101 (7) 073509 (2007)
https://doi.org/10.1063/1.2717156

Strain relaxation in heteroepitaxial films by misfit twinning. I. Critical thickness

Lilin Liu, Yousheng Zhang and Tong-Yi Zhang
Journal of Applied Physics 101 (6) 063501 (2007)
https://doi.org/10.1063/1.2433368

Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

M. Lazar and G. Wagner
Crystal Research and Technology 32 (1) 111 (1997)
https://doi.org/10.1002/crat.2170320111

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

J. L. Demenet, P. Grosbras, H. Garem and J. C. Desoyer
Philosophical Magazine A 59 (3) 501 (1989)
https://doi.org/10.1080/01418618908229781

Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

A. Olsen and J. C. H. Spence
Philosophical Magazine A 43 (4) 945 (1981)
https://doi.org/10.1080/01418618108239504