Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen, et al.
physica status solidi (a) 216 (17) (2019)
https://doi.org/10.1002/pssa.201900293

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Po-Chun (Brent) Hsu, Eddy Simoen, Clement Merckling, et al.
Journal of Applied Physics 124 (16) (2018)
https://doi.org/10.1063/1.5046827

Line defects in crystals and flux pinning in superconductors Scientific work of Reiner Labusch (1935 – 2016)

T.B. Doyle, D. Mergel, W. Schröter and R. Wagner
Materials Today: Proceedings 5 (6) 14662 (2018)
https://doi.org/10.1016/j.matpr.2018.03.058

Structure and recombination properties of extended defects in the dislocation slip plane in silicon

V. Eremenko, E. Yakimov and N. Abrosimov
physica status solidi c 4 (8) 3100 (2007)
https://doi.org/10.1002/pssc.200675462

Degradation of hexagonal silicon-carbide-based bipolar devices

M. Skowronski and S. Ha
Journal of Applied Physics 99 (1) 011101 (2006)
https://doi.org/10.1063/1.2159578

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

M. E. Twigg, R. E. Stahlbush, M. Fatemi, et al.
Applied Physics Letters 82 (15) 2410 (2003)
https://doi.org/10.1063/1.1566794

Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

M. Skowronski, J. Q. Liu, W. M. Vetter, et al.
Journal of Applied Physics 92 (8) 4699 (2002)
https://doi.org/10.1063/1.1505994

On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

P. Pirouz, A. V. Samant, M. H. Hong, A. Moulin and L. P. Kubin
Journal of Materials Research 14 (7) 2783 (1999)
https://doi.org/10.1557/JMR.1999.0372

Misfit dislocation formation in lattice-mismatched III - V heterostructures grown by metal - organic vapour phase epitaxy

J te Nijenhuis, P J van der Wel, E R H van Eck and L J Giling
Journal of Physics D: Applied Physics 29 (12) 2961 (1996)
https://doi.org/10.1088/0022-3727/29/12/004

TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism

A. Faress, C. Levade and G. Vanderschaeve
Philosophical Magazine A 68 (1) 97 (1993)
https://doi.org/10.1080/01418619308219359

The 30° dislocations in plastically deformed gallium phosphide

Gerald Wagner, Peter Paufler, Peter Pongratz and Peter Skalicky
Philosophical Magazine A 67 (1) 143 (1993)
https://doi.org/10.1080/01418619308207148

The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates

G. Patrick Watson, Dieter G. Ast, Timothy J. Anderson, Balu Pathangey and Yasuhiro Hayakawa
Journal of Applied Physics 71 (7) 3399 (1992)
https://doi.org/10.1063/1.350936

Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc‐blende structure

Bradley A. Fox and William A. Jesser
Journal of Applied Physics 68 (6) 2739 (1990)
https://doi.org/10.1063/1.346450

Evidence for the electron traps at dislocations in GaAs crystals

Tadeusz Wosiński
Journal of Applied Physics 65 (4) 1566 (1989)
https://doi.org/10.1063/1.342974

On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

C. Herbeaux, J. Di Persio and A. Lefebvre
Philosophical Magazine Letters 59 (5) 243 (1989)
https://doi.org/10.1080/09500838908206350

Slip and twinning in high-stress-deformed GaAs and the influence of doping

Y. Androussi, G. Vanderschaeve and A. Lefebvre
Philosophical Magazine A 59 (6) 1189 (1989)
https://doi.org/10.1080/01418618908221170

Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

Bruno C. De Cooman and C. Barry Carter
Philosophical Magazine A 60 (2) 245 (1989)
https://doi.org/10.1080/01418618908219283

New Developments in Semiconductor Physics

J. Heydenreich
Lecture Notes in Physics, New Developments in Semiconductor Physics 301 95 (1988)
https://doi.org/10.1007/BFb0034419

Stacking-fault energies in semiconductors from first-principles calculations

P J H Denteneer and W van Haeringen
Journal of Physics C: Solid State Physics 20 (32) L883 (1987)
https://doi.org/10.1088/0022-3719/20/32/001

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

F. Louchet and J. Thibault-Desseaux
Revue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700

Single stacking faults in high-stress deformed semi-insulating GaAs

A. Lefebvre, Y. Androussi and G. Vanderschaeve
Philosophical Magazine Letters 56 (4) 135 (1987)
https://doi.org/10.1080/09500838708203761

Recovery of edge-defined film-fed grown silicon Dislocation/twin boundary interaction and mechanisms for twin-induced grain boundary formation

R. Gdeichmann, M. D. Vaudin and D. G. Ast
Philosophical Magazine A 51 (3) 449 (1985)
https://doi.org/10.1080/01418618508237566

Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry

H. Veth and H. Teichler
Philosophical Magazine B 49 (4) 371 (1984)
https://doi.org/10.1080/13642818408246525

"Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7×7 Reconstruction

P. M. Petroff and R. J. Wilson
Physical Review Letters 51 (3) 199 (1983)
https://doi.org/10.1103/PhysRevLett.51.199

Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

A. Olsen and J. C. H. Spence
Philosophical Magazine A 43 (4) 945 (1981)
https://doi.org/10.1080/01418618108239504