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Cited article:

COEXISTENCE OF INSULATING AND METALLIC ELECTRONIC PHASES IN DOPED SEMICONDUCTORS AT LOW TEMPERATURE : ELEMENTS OF A CONCENTRATION TEMPERATURE DIAGRAM

P. Leroux Hugon, A. Ghazali

J. Phys. Colloques, 39 C6 (1978) C6-1074-C6-1076

DOI: https://doi.org/10.1051/jphyscol:19786476

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This article has been cited by the following article(s):

Dielectric-constant enhancement as the insulator-metal transition is approached from the insulating side—a reply

A. Ghazali and P. Leroux Hugon
Physical Review B 20 (8) 3508 (1979)
https://doi.org/10.1103/PhysRevB.20.3508