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Cited article:

Contact potential measurements with a local Kelvin probe

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Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide

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Effect of primary ionization in amorphous silicon detectors

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Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon

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Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films

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Microscopic model of the Staebler-Wronski effect in intrinsic amorphous hydrogenated silicon

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The Physics of Hydrogenated Amorphous Silicon II

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Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon

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Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-Si

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Conductivity of amorphous hydrogenated silicon in the planar and sandwich configurations

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Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect

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Doping effects on post-hydrogenated chemical-vapour-deposited amorphous silicon

J. Magario, D. Kaplan, A. Friederich and A. Deneuville
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Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

D. G. Ast and M. H. Brodsky
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Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy

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Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

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