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Cited article:

LATTICE LOCATION OF 5s-p IMPURITIES IMPLANTED IN TYPE-IV SEMICONDUCTORS

M. VAN ROSSUM, J. DE BRUYN, G. LANGOUCHE, R. COUSSEMENT, P. BOOLCHAND

J. Phys. Colloques, 37 C6 (1976) C6-889-C6-892

DOI: https://doi.org/10.1051/jphyscol:19766188

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This article has been cited by the following article(s):

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Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive tellurium

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