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Cited article:

MÖSSBAUER STUDIES ON DAMAGE SITES OF ISOTOPE-SEPARATOR-IMPLANTED IMPURITY ATOMS IN SILICON

A. NYLANDSTED LARSEN, G. WEYER, B. I. DEUTCH, E. ANTONCIK, H. LOFT NIELSEN

J. Phys. Colloques, 37 C6 (1976) C6-883-C6-887

DOI: https://doi.org/10.1051/jphyscol:19766187

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This article has been cited by the following article(s):

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Mössbauer emission studies of defect 119Sn, 119Sb, and 119mTe atoms after nuclear decays and reactions in SnSb, SnTe, and Sb2Te3

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The Journal of Chemical Physics 73 (5) 2029 (1980)
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Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive tellurium

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Physical Review B 21 (11) 4951 (1980)
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Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive antimony

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https://doi.org/10.1103/PhysRevB.21.4939