STUDY OF THE MOTT TRANSITION IN n-TYPE CdS BY SPIN FLIP RAMAN SCATTERING AND SPIN FARADAY ROTATION
J. Phys. Colloques, 37 C4 (1976) C4-313-C4-316
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter
S. Derenzo, E. Bourret, S. Hanrahan and G. BizarriJournal of Applied Physics 123 (11) (2018)
https://doi.org/10.1063/1.5018343
Susceptibility of Si:P across the metal-insulator transition. II. Evidence for local moments in the metallic phase
A. Roy and M. P. SarachikPhysical Review B 37 (10) 5531 (1988)
https://doi.org/10.1103/PhysRevB.37.5531
Temperature-dependent conductivity of metallic doped semiconductors
G. Thomas, A. Kawabata, Y. Ootuka, et al.Physical Review B 26 (4) 2113 (1982)
https://doi.org/10.1103/PhysRevB.26.2113
Conductivity Cusp in a Disordered Metal
T. F. Rosenbaum, K. Andres, G. A. Thomas and P. A. LeePhysical Review Letters 46 (8) 568 (1981)
https://doi.org/10.1103/PhysRevLett.46.568
The study of electron dynamics in n-type CdS by spin-flip Raman scattering
S. Geschwind, R. E. Walstedt, R. Romestain, et al.Philosophical Magazine B 42 (6) 961 (1980)
https://doi.org/10.1080/01418638008222340
Modern Trends in the Theory of Condensed Matter
K. A. ChaoLecture Notes in Physics, Modern Trends in the Theory of Condensed Matter 115 339 (1980)
https://doi.org/10.1007/BFb0120143
Origin of negative magnetoresistance in heavily dopedn-type silicon and germanium
B. Sernelius and K. -F. BerggrenPhysical Review B 19 (12) 6390 (1979)
https://doi.org/10.1103/PhysRevB.19.6390
Density-Functional Approach to the Metal-Insulator Transition in Doped Semiconductors
A. Ghazali and P. Leroux HugonPhysical Review Letters 41 (22) 1569 (1978)
https://doi.org/10.1103/PhysRevLett.41.1569
Conductivity and mobility edges in disordered systems. II. Further calculations for the square and diamond lattices
D C Licciardello and D J ThoulessJournal of Physics C: Solid State Physics 11 (5) 925 (1978)
https://doi.org/10.1088/0022-3719/11/5/013
Universality aspects of the metal-nonmetal transition in condensed media
Peter Phillip Edwards and Michell J. SienkoPhysical Review B 17 (6) 2575 (1978)
https://doi.org/10.1103/PhysRevB.17.2575
Measurement of the LinearkTerm in a Polar Crystal (CdS) by Spin-Flip Raman Scattering
R. Romestain, S. Geschwind and G. E. DevlinPhysical Review Letters 39 (24) 1583 (1977)
https://doi.org/10.1103/PhysRevLett.39.1583