IMPURITY BAND CONDUCTION. EXPERIMENT AND THEORYTHE METAL-INSULATOR TRANSITION IN AN IMPURITY BAND
J. Phys. Colloques, 37 C4 (1976) C4-301-C4-306
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
(2025)
https://doi.org/10.5772/intechopen.1009103
Cluster truncated Wigner approximation for bond-disordered Heisenberg spin models
Adrian Braemer, Javad Vahedi and Martin GärttnerPhysical Review B 110 (5) (2024)
https://doi.org/10.1103/PhysRevB.110.054204
Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga2O3
Zeyu Chi, Se-Rim Park, Luka Burdiladze, Tamar Tchelidze, Jean-Michel Chauveau, Yves Dumont, Sang-Mo Koo, Zurab Kushitashvili, Amiran Bibilashvili, Gérard Guillot, Amador Pérez-Tomás, Xin-Ying Tsai, Fu-Gow Tarntair, Ray Hua Horng and Ekaterine ChikoidzeMaterials Today Physics 49 101602 (2024)
https://doi.org/10.1016/j.mtphys.2024.101602
Global quench dynamics and the growth of entanglement entropy in disordered spin chains with tunable range interactions
Y. Mohdeb, J. Vahedi, R. N. Bhatt, S. Haas and S. KettemannPhysical Review B 108 (14) (2023)
https://doi.org/10.1103/PhysRevB.108.L140203
Electrical Contacts With 2D Materials: Current Developments and Future Prospects
Saima Batool, Muhammad Idrees, Su‐Ting Han, Vellaisamy A. L. Roy and Ye ZhouSmall 19 (12) (2023)
https://doi.org/10.1002/smll.202206550
Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC
Hideharu Matsuura, Atsuki Hidaka, Shiyang Ji, et al.Journal of Applied Physics 134 (11) (2023)
https://doi.org/10.1063/5.0165404
Towards a comprehensive theory of metal–insulator transitions in doped semiconductors
S. KettemannAnnals of Physics 456 169306 (2023)
https://doi.org/10.1016/j.aop.2023.169306
Testing the validity of random-singlet state for long-range hopping models through the scaling of entanglement entropy
Róbert JuhászPhysical Review B 105 (1) (2022)
https://doi.org/10.1103/PhysRevB.105.014206
Inhomogeneous Kondo destruction by RKKY correlations
Kyung-Yong Park, Iksu Jang, Ki-Seok Kim and S. KettemannAnnals of Physics 435 168501 (2021)
https://doi.org/10.1016/j.aop.2021.168501
Optoelectronic Properties of Graphene-Based van der Waals Hybrids
Kallol RoySpringer Theses, Optoelectronic Properties of Graphene-Based van der Waals Hybrids 13 (2020)
https://doi.org/10.1007/978-3-030-59627-9_2
Tuning Electrical Conductance of MoS2 Monolayers through Substitutional Doping
Hui Gao, Joonki Suh, Michael C. Cao, et al.Nano Letters 20 (6) 4095 (2020)
https://doi.org/10.1021/acs.nanolett.9b05247
Revealing the beneficial effects of Ge doping on Cu2ZnSnSe4 thin film solar cells
Markus Neuschitzer, Moises Espindola Rodriguez, Maxim Guc, et al.Journal of Materials Chemistry A 6 (25) 11759 (2018)
https://doi.org/10.1039/C8TA02551G
Disordered quantum spin chains with long-range antiferromagnetic interactions
N. Moure, Hyun-Yong Lee, S. Haas, R. N. Bhatt and S. KettemannPhysical Review B 97 (1) (2018)
https://doi.org/10.1103/PhysRevB.97.014206
Anderson metal-insulator transitions with classical magnetic impurities
Daniel Jung, Stefan Kettemann and Keith SlevinPhysical Review B 93 (13) (2016)
https://doi.org/10.1103/PhysRevB.93.134203
Conduction mechanism in highly doped β-Ga2O3 single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Toshiyuki Oishi, Kazuya Harada, Yuta Koga and Makoto KasuJapanese Journal of Applied Physics 55 (3) 030305 (2016)
https://doi.org/10.7567/JJAP.55.030305
Temperature dependent electrical characterization of thin film Cu2ZnSnSe4solar cells
E Kask, J Krustok, S Giraldo, et al.Journal of Physics D: Applied Physics 49 (8) 085101 (2016)
https://doi.org/10.1088/0022-3727/49/8/085101
Temperature dependent current transport properties in Cu2ZnSnS4 solar cells
Mati Danilson, Erkki Kask, Nikhil Pokharel, et al.Thin Solid Films 582 162 (2015)
https://doi.org/10.1016/j.tsf.2014.10.069
Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
Sajedeh Manzeli, Adrien Allain, Amirhossein Ghadimi and Andras KisNano Letters 15 (8) 5330 (2015)
https://doi.org/10.1021/acs.nanolett.5b01689
Many-body localization transition in random quantum spin chains with long-range interactions
N. Moure, S. Haas and S. KettemannEPL (Europhysics Letters) 111 (2) 27003 (2015)
https://doi.org/10.1209/0295-5075/111/27003
Electrical contacts to two-dimensional semiconductors
Adrien Allain, Jiahao Kang, Kaustav Banerjee and Andras KisNature Materials 14 (12) 1195 (2015)
https://doi.org/10.1038/nmat4452
GHz photon-activated hopping between localized states in a silicon quantum dot
T Ferrus, A Rossi, A Andreev, et al.New Journal of Physics 16 (1) 013016 (2014)
https://doi.org/10.1088/1367-2630/16/1/013016
Comprehensive Semiconductor Science and Technology
M. Eto and H. KamimuraComprehensive Semiconductor Science and Technology 77 (2011)
https://doi.org/10.1016/B978-0-44-453153-7.00049-3
Effective spin susceptibility, electron mass and Landé factor in two-dimensional (2D) Si inversion layers
H. Van CongPhysica E: Low-dimensional Systems and Nanostructures 22 (4) 924 (2004)
https://doi.org/10.1016/j.physe.2003.12.125
Matrix mean-field theory for the paramagnetic susceptibility of disordered magnets
D. Zhao and D. HuberPhysical Review B 53 (21) 14223 (1996)
https://doi.org/10.1103/PhysRevB.53.14223
Coherence and Energy Transfer in Glasses
H. M. Gibbs, S. Chu, S. L. McCall, et al.Coherence and Energy Transfer in Glasses 373 (1984)
https://doi.org/10.1007/978-1-4684-4733-0_16
Numerical studies of energy levels and eigenfunction localization in dilute three-dimensional systems with exponential interactions
W. Ching and D. HuberPhysical Review B 25 (2) 1096 (1982)
https://doi.org/10.1103/PhysRevB.25.1096
Analysis of the pretransition range of the metal-insulator transition in doped semiconductors
G. NeumarkPhysical Review B 20 (4) 1519 (1979)
https://doi.org/10.1103/PhysRevB.20.1519
Density-Functional Approach to the Metal-Insulator Transition in Doped Semiconductors
A. Ghazali and P. Leroux HugonPhysical Review Letters 41 (22) 1569 (1978)
https://doi.org/10.1103/PhysRevLett.41.1569
Extrinsic heat capacity in the metallic regime of heavily doped silicon and germanium
K. BerggrenPhysical Review B 17 (6) 2631 (1978)
https://doi.org/10.1103/PhysRevB.17.2631