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Cited article:

Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration

N. Barreau, T. Painchaud, F. Couzinié-Devy, L. Arzel and J. Kessler
Acta Materialia 58 (17) 5572 (2010)
https://doi.org/10.1016/j.actamat.2010.06.025