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Cited article:

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Yacouba Issa Diakite, Sibiri D. Traore, Yuriy Malozovsky, et al.
Journal of Modern Physics 08 (04) 531 (2017)
https://doi.org/10.4236/jmp.2017.84035

Electronic structure of Cu, Ni, Co, and Fe substitutional impurities in gallium arsenide

Adalberto Fazzio and José Leite
Physical Review B 21 (10) 4710 (1980)
https://doi.org/10.1103/PhysRevB.21.4710

Photocapacitance effects of deep traps in epitaxial GaAs

A. M. White, P. J. Dean and P. Porteous
Journal of Applied Physics 47 (7) 3230 (1976)
https://doi.org/10.1063/1.323120

Low-loss high-purity GaAs waveguides for monolithic integrated optical circuits at GaAs laser wavelengths

G. E. Stillman, C. M. Wolfe, J. A. Rossi and H. Heckscher
Applied Physics Letters 28 (4) 197 (1976)
https://doi.org/10.1063/1.88694