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Cited article:
D. BOIS
J. Phys. Colloques, 35 C3 (1974) C3-241-C3-246
This article has been cited by the following article(s):
6 articles
Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)
Yacouba Issa Diakite, Sibiri D. Traore, Yuriy Malozovsky, et al. Journal of Modern Physics 08 (04) 531 (2017) https://doi.org/10.4236/jmp.2017.84035
Electronic structure of Cu, Ni, Co, and Fe substitutional impurities in gallium arsenide
Adalberto Fazzio and José Leite Physical Review B 21 (10) 4710 (1980) https://doi.org/10.1103/PhysRevB.21.4710
Trends in the electronic properties of substitutional3dtransition-metal impurities in GaAs
L. A. Hemstreet Physical Review B 22 (10) 4590 (1980) https://doi.org/10.1103/PhysRevB.22.4590
Mise en évidence d'un état métastable du centre associé à l'oxygène dans GaAs
D. Bois and G. Vincent Journal de Physique Lettres 38 (17) 351 (1977) https://doi.org/10.1051/jphyslet:019770038017035100
Photocapacitance effects of deep traps in epitaxial GaAs
A. M. White, P. J. Dean and P. Porteous Journal of Applied Physics 47 (7) 3230 (1976) https://doi.org/10.1063/1.323120
Low-loss high-purity GaAs waveguides for monolithic integrated optical circuits at GaAs laser wavelengths
G. E. Stillman, C. M. Wolfe, J. A. Rossi and H. Heckscher Applied Physics Letters 28 (4) 197 (1976) https://doi.org/10.1063/1.88694