ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT T. BENABBAS, C. CABANEL, J.Y. LAVAL, J.L. PASTOL et NGUYEN DINH HUYNH J. Phys. Colloques, 51 C1 (1990) C1-439-C1-444 DOI: 10.1051/jphyscol:1990168