ON THE KINETICS OF THE CVD OF Si FROM SiH2Cl2/H2 AND SiC FROM CH3SiCl3/H2 IN A VERTICAL TUBULAR HOT-WALL REACTOR F. LANGLAIS, C. PREBENDE, B. TARRIDE et R. NASLAIN J. Phys. Colloques, 50 C5 (1989) C5-93-C5-103 DOI: 10.1051/jphyscol:1989515