Supplément au Journal de Physique Colloques

DEFECT CHARACTERIZATION OF Si⁺-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE

J.-L. LEE, K.-H. SHIM, S. TANIGAWA, A. UEDONO, J.S. KIM, H.M. PARK and D.S. MA

J. Phys. Colloques, 49 C4 (1988) C4-457-C4-460

DOI: 10.1051/jphyscol:1988497

J.-L. LEE

K.-H. SHIM

S. TANIGAWA

A. UEDONO

J.S. KIM

H.M. PARK

D.S. MA

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