Supplément au Journal de Physique Colloques

THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS

L. Viña, C. Umbach, A. Compaan, M. Cardona and A. Axmann

J. Phys. Colloques, 44 C5 (1983) C5-203-C5-208

DOI: 10.1051/jphyscol:1983532

L. Viña

C. Umbach

A. Compaan

M. Cardona

A. Axmann

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