LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP
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J. Phys. Colloques, 43 C5 (1982) C5-61-C5-68
DOI: 10.1051/jphyscol:1982508
