ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT T. BENABBAS, C. CABANEL, J. Y. LAVAL, J. L. PASTOL et DINH HUYNH NGUYENJ. Phys. Colloques, 51 C1 (1990) C1-439-C1-444DOI: https://doi.org/10.1051/jphyscol:1990168
