EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH, L. AMMOR et S. MARTINUZZIJ. Phys. Colloques, 50 C6 (1989) C6-159DOI: https://doi.org/10.1051/jphyscol:1989619
