EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR J. L. REGOLINI, D. BENSAHEL, J. MERCIER et E. SCHEIDJ. Phys. Colloques, 50 C5 (1989) C5-519-C5-527DOI: https://doi.org/10.1051/jphyscol:1989561
