DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE J.-L. LEE, K.-H. SHIM, S. TANIGAWA, A. UEDONO, J. S. KIM, H. M. PARK et D. S. MAJ. Phys. Colloques, 49 C4 (1988) C4-457-C4-460DOI: https://doi.org/10.1051/jphyscol:1988497
