0.9 eV POTENTIAL BARRIER SCHOTTKY DIODE ON 0.75-0.5 eV GAP GaxIn1-xAS\a-Si:H\Pt A. DENEUVILLE, F. VALENTIN et S. BELKOUCHJ. Phys. Colloques, 49 C4 (1988) C4-449-C4-452DOI: https://doi.org/10.1051/jphyscol:1988495
