INFLUENCE OF THE FABRICATION CONDITIONS ON THE p+-TaSi2/POLY-Si GATE QUALITY C. MAZURE, U. SCHWALKE, F. NEPPL, P. EICHINGER et M. METZGERJ. Phys. Colloques, 49 C4 (1988) C4-405-C4-408DOI: https://doi.org/10.1051/jphyscol:1988485
