UNIFIED MODEL FOR BIPOLAR TRANSISTORS INCLUDING THE VOLTAGE AND CURRENT DEPENDENCE OF THE BASE AND COLLECTOR RESISTANCES AS WELL AS THE BREAKDOWN LIMITS F. HÉBERT et D. J. ROULSTONJ. Phys. Colloques, 49 C4 (1988) C4-371-C4-374DOI: https://doi.org/10.1051/jphyscol:1988477
