MEASUREMENT OF MINORITY-CARRIER LIFETIME AND INTERFACE RECOMBINATION VELOCITIES IN P-I-N DIODES, FROM HIGH FREQUENCY RESPONSE OF A BIPOLAR JFET STRUCTURE G. VITALE et P. SPIRITOJ. Phys. Colloques, 49 C4 (1988) C4-359-C4-362DOI: https://doi.org/10.1051/jphyscol:1988474
