THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS U. SCHWALKE, E. P. JACOBS et B. BREITHAUPTJ. Phys. Colloques, 49 C4 (1988) C4-299-C4-302DOI: https://doi.org/10.1051/jphyscol:1988462
