IN SITU PROCESSING OF InP BY FLASH LPCVD FOR SURFACE PREPARATION AND GATE OXIDE DEPOSITION Y. I. NISSIM, C. LICOPPE, J. M. MOISON et C. MERIADECJ. Phys. Colloques, 49 C4 (1988) C4-213-C4-215DOI: https://doi.org/10.1051/jphyscol:1988444
