PROPERTIES OF WSi2 : OHMIC CONTACT TO N+ AND P+ Si, BARRIER BETWEEN Al AND Si, AND FEASIBILITY AS FIRST METAL IN MULTILEVEL METALLIZATION PROCESSES S.-L. ZHANG, M. HAMMAR, T. JOHANSSON et R. BUCHTAJ. Phys. Colloques, 49 C4 (1988) C4-171-C4-174DOI: https://doi.org/10.1051/jphyscol:1988434
