A GaAs ON Si COPLANAR TECHNOLOGY BY EMBEDDED MOLECULAR BEAM EPITAXY J. B. LIANG, J. DE BOECK, R. MERTENS et G. BORGHSJ. Phys. Colloques, 49 C4 (1988) C4-701-C4-704DOI: https://doi.org/10.1051/jphyscol:19884147
