ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR C. FONTAINE, J. CASTAGNE, E. BEDEL et A. MUNOZ-YAGUEJ. Phys. Colloques, 49 C4 (1988) C4-697-C4-700DOI: https://doi.org/10.1051/jphyscol:19884146
