HOT ELECTRON RELIABILITY OF DEEP SUBMICRON MOS TRANSISTORS G. REIMBOLD, F. PAVIET-SALOMON, H. HADDARA, G. GUEGAN et S. CRISTOLOVEANUJ. Phys. Colloques, 49 C4 (1988) C4-665-C4-668DOI: https://doi.org/10.1051/jphyscol:19884139
