USE OF A GATE DELAY EXPRESSION TO COMPARE SELF-ALIGNED SILICON BIPOLAR AND AlGaAs/GaAs HETEROJUNCTION BIPOLAR TECHNOLOGIES P. ASHBURN, A. A. REZAZADEH, E. F. CHOR et A. BRUNNSCHWEILERJ. Phys. Colloques, 49 C4 (1988) C4-571-C4-574DOI: https://doi.org/10.1051/jphyscol:19884120
