MIGRATION OF FLUORINE ATOMS AND INFLUENCE ON SHALLOW P+N JUNCTION IN B+2 IMPLANTED SILICON UNDER RTA T.-Q. ZHANG, J.-L. LIU et X.-Y. YANGJ. Phys. Colloques, 49 C4 (1988) C4-519-C4-522DOI: https://doi.org/10.1051/jphyscol:19884108
