CONDUCTING DIFFUSION BARRIER : FORMATION AND CHARACTERISATION OF WN OBTAINED BY THERMAL ANNEALING UNDER NH3 OF W FILMS DEPOSITED ON Si A. DENEUVILLE, M. BENYAHYA, M. BRUNEL et B. CANUTJ. Phys. Colloques, 49 C4 (1988) C4-499-C4-502DOI: https://doi.org/10.1051/jphyscol:19884103
