GROWTH CONTROL OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS T. SAKAMOTO, K. SAKAMOTO, H. OYANAGI, T. YAO, T. ISHIGURO, S . NAGAO, G. HASHIGUCHI, K. KUNIYOSHI et Y. BANDOJ. Phys. Colloques, 48 C5 (1987) C5-333-C5-336DOI: https://doi.org/10.1051/jphyscol:1987571