ELECTRONIC PROPERTIES OF Si-INVERSION LAYER WITH MODULATED BAND STRUCTURE INDUCED BY PERIODIC ELECTRON BEAM IRRADIATION OF GATE OXIDE F. VETTESE, J. SICART, J. L. ROBERT, G. VINCENT et A. VAREILLEJ. Phys. Colloques, 48 C5 (1987) C5-195-C5-198DOI: https://doi.org/10.1051/jphyscol:1987539
