THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE G. N. GREAVES, P. J. HALFPENNY, G. M. LAMBLE et K. J. ROBERTSJ. Phys. Colloques, 47 C8 (1986) C8-901-C8-904DOI: https://doi.org/10.1051/jphyscol:19868175
