ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING A. Mesli, J. C. Muller et P. SiffertJ. Phys. Colloques, 44 C5 (1983) C5-281-C5-295DOI: https://doi.org/10.1051/jphyscol:1983543
