THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS L. Viña, C. Umbach, A. Compaan, M. Cardona et A. AxmannJ. Phys. Colloques, 44 C5 (1983) C5-203-C5-208DOI: https://doi.org/10.1051/jphyscol:1983532
