PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON I. Golecki, H. M. Manasevit, J. J. Yang, L. A. Moudy, J. E. Mee et T. J. MageeJ. Phys. Colloques, 43 C5 (1982) C5-427DOI: https://doi.org/10.1051/jphyscol:1982549