THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs J. P. DucheminJ. Phys. Colloques, 43 C5 (1982) C5-87-C5-92DOI: https://doi.org/10.1051/jphyscol:1982511
