LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP R. Linnebach, K. Hess, K. Lösch et G. SchemmelJ. Phys. Colloques, 43 C5 (1982) C5-61-C5-68DOI: https://doi.org/10.1051/jphyscol:1982508
