EFFECT OF OXYGEN PRESSURE ON OXYGEN INCORPORATION IN Si AND Ga As DURING Q SWITCHED LASER IRRADIATION G. G. Bentini, M. Berti, C. Cohen, A. V. Drigo, E. Iannitti, D. Pribat et J. SiejkaJ. Phys. Colloques, 43 C1 (1982) C1-229-C1-234DOI: https://doi.org/10.1051/jphyscol:1982131