RF POWER AND TEMPERATURE DEPENDENCES IN GD a-Si PRODUCED FROM HEATED SiH4 S. Hasegawa, Y. Kurata, Y. Imai et S. NarikawaJ. Phys. Colloques, 42 C4 (1981) C4-675-C4-678DOI: https://doi.org/10.1051/jphyscol:19814149
