A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR Y. Sawan, M. El-Gabaly, F. Wakim et S. AtariJ. Phys. Colloques, 42 C4 (1981) C4-511-C4-514DOI: https://doi.org/10.1051/jphyscol:19814109
