LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE V. V. Makarov, T. Tuomi, K. Naukkarinen, M. Luomajärvi et M. RiihonenJ. Phys. Colloques, 41 C4 (1980) C4-111-C4-112DOI: https://doi.org/10.1051/jphyscol:1980420
