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Cited article:

CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

A. STRABONI, M. BERENGUER, B. VUILLERMOZ, P. DEBENEST, A. VERNA, P. DARS

J. Phys. Colloques, 49 C4 (1988) C4-421-C4-424

DOI: https://doi.org/10.1051/jphyscol:1988489

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This article has been cited by the following article(s):

Electron-beam-induced nitrogen migration through a nitrided silicon dioxide thin film

V. Garcia, A. Glachant, R. Pantel and A. Straboni
Applied Surface Science 74 (2) 165 (1994)
https://doi.org/10.1016/0169-4332(94)90298-4

Quantitative Auger sputter depth profiling of very thin nitrided oxide

K. Barla, D. Nicolas, R. Pantel, et al.
Journal of Applied Physics 68 (7) 3635 (1990)
https://doi.org/10.1063/1.346326