Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES

F. BALESTRA, L. HAFEZ, G. GHIBAUDO

J. Phys. Colloques, 49 C4 (1988) C4-817-C4-820

DOI: https://doi.org/10.1051/jphyscol:19884172

PDF (128.5 KB)

This article has been cited by the following article(s):

Novel Methodology for MOSFET Parameter Extraction From Weak to Strong Inversion Range in Ohmic Operation at Very Cryogenic Temperatures

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen
IEEE Transactions on Electron Devices 73 (1) 97 (2026)
https://doi.org/10.1109/TED.2025.3639192

Modeling of β-Ga2O3 based double gate drain extended junction less FET and its parameter extraction methodology

Vanajakumari Raju Manukrishna and KrishnanNadar Savithry Nikhil
Modelling and Simulation in Materials Science and Engineering 33 (2) 025012 (2025)
https://doi.org/10.1088/1361-651X/ada819

Precise analysis of electrical properties in MoS2 devices via H-TFSI ion reactions

Hyunjin Ji
Current Applied Physics 80 99 (2025)
https://doi.org/10.1016/j.cap.2025.08.004

Hyeran Cho, YunJae Choi, Ahn JinWoo, Doyoon Kim, DongHyeon Kim, BeomJun Kim and Gyu Tae Kim
(2024)
https://doi.org/10.21203/rs.3.rs-5349438/v1

Springer Handbook of Semiconductor Devices

Salim El Ghouli and Denis Rideau
Springer Handbooks, Springer Handbook of Semiconductor Devices 391 (2023)
https://doi.org/10.1007/978-3-030-79827-7_12

Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits

Li Gao, Zhangyi Chen, Chao Chen, Xiankun Zhang, Zheng Zhang and Yue Zhang
Nano Research 16 (11) 12471 (2023)
https://doi.org/10.1007/s12274-023-6167-z

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Hung-Chi Han, Farzan Jazaeri, Antonio D’Amico, Zhixing Zhao, Steffen Lehmann, Claudia Kretzschmar, Edoardo Charbon and Christian Enz
Solid-State Electronics 193 108296 (2022)
https://doi.org/10.1016/j.sse.2022.108296

Pronounced Optoelectronic Effect in n–n ReS2 Homostructure

Sewon Park, Jisang Ha, Muhammad Farooq Khan, et al.
ACS Applied Electronic Materials 4 (9) 4306 (2022)
https://doi.org/10.1021/acsaelm.2c00567

Impact of Series Resistance on Bulk CMOS Current Matching Over the 5–300K Temperature Range

Nguyen Cong Dao, Abdallah El Kass, Craig T. Jin and Philip H. W. Leong
IEEE Electron Device Letters 38 (7) 847 (2017)
https://doi.org/10.1109/LED.2017.2709545

Contact Effect of ReS2/Metal Interface

Jae Young Park, Hang-Eun Joe, Hyong Seo Yoon, et al.
ACS Applied Materials & Interfaces 9 (31) 26325 (2017)
https://doi.org/10.1021/acsami.7b06432